Correspondence to 450mm
with parallel type of multi plasma source
Wide process window: Pressure, Power
Simple transition of plasma generation mode: wide control of plasma density
Parallel type of plasma source overcomes the disadvantage of a single ICP (high Vpp)
Low plasma density on the wafer surface and high gas flow at the low pressure and high pumping
Parameter | Capacitive Source | Inductive Source | MRS 300 |
Pressure (mTorr) | 100 ~ 10000 | 10 ~ 1000 | 0.1 ~ 1000 |
RF Power (W) | < 2k | < 5k | ~ 10k |
Frequency (MHz) | 0.05 ~ 100 | 0.05 ~ 40 | 4 ~ 30 |
Magnetic Field (gauss) | No | No | 50 ~ 1000 |
Plasma Density (cm-3) | 109 ~ 1011 | 1010 ~ 1012 | 1011 ~ 1014 |
Electron Temperature (eV) | 1 ~ 3 | 2 ~ 7 | 2 ~ 7 |
Neutral Temperature (K) | ~ 500 | ~ 1500 | ~ 3000 |
Strong points | Large Area Easy Expandability | High Density | Very High Density Expandability Controllability in WIW Uniformity |
Weak points | Slow Process Rate | Bad Uniformity | Complex H/W |
Applications | Deposition (ALD) Oxide Etching | Deposition Silicon or Metal Etching | Plasma Diffusion Deposition (ALD) Etching |
- High dissociation rate - Generation of high - density radicals |
- High concentration of N - Step coverage in high AR - Throughput |
- Long mean free path in radical diffusion (Molecular flow) |
- Radical uniformity - Step coverage in high AR |
- Predominant neutral heating - High activation energy of radicals |
- Film quality - Low-T processes |
- Independent control of Inner/outer RF powers |
- Controllability of Process Uniformity (Tunable) |