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Plasma source to generate high-density radical with high RF power at low pressure

Correspondence to 450mm

with parallel type of multi plasma source

Wide process window: Pressure, Power

Simple transition of plasma generation mode: wide control of plasma density

Parallel type of plasma source overcomes the disadvantage of a single ICP (high Vpp)

Low plasma density on the wafer surface and high gas flow at the low pressure and high pumping

Comparison of Plasma Characteristics
Parameter
Capacitive Source
Inductive Source
MRS 300
Pressure (mTorr)
100 ~ 10000
10 ~ 1000
0.1 ~ 1000
RF Power (W)
< 2k
< 5k
~ 10k
Frequency (MHz)
0.05 ~ 100
0.05 ~ 40
4 ~ 30
Magnetic Field (gauss)
No
No
50 ~ 1000
Plasma Density (cm-3)
109 ~ 1011
1010 ~ 1012
1011 ~ 1014
Electron Temperature (eV)
1 ~ 3
2 ~ 7
2 ~ 7
Neutral Temperature (K)
~ 500
~ 1500
~ 3000
Strong points
Large Area
 Easy Expandability
High Density
Very High Density
Expandability
Controllability in WIW Uniformity
Weak points
Slow Process Rate
Bad Uniformity
Complex H/W
Applications
Deposition (ALD)
Oxide Etching
Deposition
Silicon or Metal Etching
Plasma Diffusion
Deposition (ALD)
Etching
MRS300 Process Key Technology (Ⅰ)

MRS300 will provide good solutions for process key issues.

Low-T Process


  • High plasma density and electron temp. (>1012/cm3)
  • Sufficient generation highly reaofctive radicals
  • Reaction energy supplied by high flux radicals with high temperature
Step Coverage


  • High plasma density and electron temp. 
  • Sufficient generation of highly reactive radicals at low pressure 
  • Long MFP of radicals even in high-aspect-ratio small pattern (Refer to Next page)
Particle & Throughput


  • Low pressure operation : rare gas-phase reaction and low particle generate rate
  • High radical density : reduction of process time and improvement of throughput
MRS300 Process Key Technology (Ⅱ)
High-density Plasma (High RF Power)
- High dissociation rate
- Generation of high
- density radicals
- High concentration of N
- Step coverage in high AR
- Throughput
Low-pressure Processes
- Long mean free path in
  radical diffusion (Molecular flow)
- Radical uniformity
- Step coverage in high AR
High Neutral Temperature
- Predominant neutral heating
- High activation energy of radicals
- Film quality
- Low-T processes
Two RF Power System
- Independent control of
  Inner/outer RF powers
- Controllability of Process
  Uniformity (Tunable)
Applications of Wintel Plasma Source