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LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
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R&D History
Organization chart
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LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
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Contact US
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About us
CEO Message
Company overview
Our Creed
History
R&D History
Organization chart
Location
Products
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
R&D
Technology
Patente & Certification
Contact US
한국어
English
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한국어
English
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
Deped ACL Removal
WINTEL'S PRODUCTS
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
Pattern image
Pattern image
High removal rate of new hard mask materials
W doped ACL : 6000Å/min
B doped ACL : 5000Å/min
Good selectivity against dielectric materials
SiO
2
: ≒400:1 (W-doped)
≒300:1(B-doped)
Si
3
N
4
:≥700:1 (W-doped)
≥500:1(B-doped)
