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About us
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Company overview
Our Creed
History
R&D History
Organization chart
Location
Products
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
R&D
Technology
Patente & Certification
Contact US
한국어
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한국어
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LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
PE ALD
WINTEL'S PRODUCTS
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
Low-temperature Si
3
N
4
Wafer temperature ≥250℃
Good film quality (WER, R.I)
High growth rate >0.7Å/cycle
Excellent step coverage for A/R >40:1
Low-k SiCN
Wafer temperature ≥300℃
Good film quality (WER, DER, R.I~1.84)
Low permittivity <4.5
High growth rate >0.5Å/cycle
Excellent step coverage for A/R >10:1
Low incubation time (Sub-layer W, Poli-Si, Oxide, Nitride etc.)
