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About us
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Company overview
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LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
R&D
Technology
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About us
CEO Message
Company overview
Our Creed
History
R&D History
Organization chart
Location
Products
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
R&D
Technology
Patente & Certification
Contact US
한국어
English
Site logo
About us
CEO Message
Company overview
Our Creed
History
R&D History
Organization chart
Location
Products
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
R&D
Technology
Patente & Certification
Contact US
한국어
English
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LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
LPR (Low-Pressure Removal)
WINTEL'S PRODUCTS
LPR (Low-Pressure Removal)
PE ALD
Poly Etcher
HARC
Doped ACL
EER
EUV
Comparison of PR removal ability
PR Removal Data Comparison
Wintel LPR shows higher removal rate for all type of ashing processes.
Especially Wintel LPR shows excellent performance in low O
2
and no O
2
removal processes.
U.HA Plasma Source
U.HA Plasma Source
Normal ashing process with unique plasma source is possible.
In particular, excellent results can be
obtained from low O
2
& No O
2
processes.
Low pressure process favors particle reduction
(Fume reduced)
Low pressure & low Temperature Excellent performance
(Low -P & low –T mask removal)